| PART |
Description |
Maker |
| BSP92P |
Low Voltage MOSFETs - Small Signal MOSFET, -250V, SOT-223, RDSon = 12
SIPMOS Small-Signal-Transistor
|
Infineon Technologies AG
|
| BSP315P |
SIPMOS Small-Signal-Transistor
Low Voltage MOSFETs - Small Signal MOSFET, -60V, SOT-223, RDSon = 0.80
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| BSS84P |
Low Voltage MOSFETs - Small Signal MOSFET, -60V, SOT-23, RDSon = 8
|
Infineon
|
| BSP171P |
Low Voltage MOSFETs - Small Signal MOSFET, -60V, SOT-223, RDSon = 0.30
|
Infineon
|
| BSP89 |
Low Voltage MOSFETs - Small Signal MOSFET, 240V, SOT-223, RDSon=6.0 Ohm, 0.36A, LL
|
Infineon
|
| BSP297 |
Low Voltage MOSFETs - Small Signal MOSFET, 200V, SOT-223, RDSon=2.0 Ohm, 0.65A, LL
|
Infineon
|
| BSP88 |
Low Voltage MOSFETs - Small Signal MOSFET, 240V, SOT-223, RDSon=8.0 Ohm, 0.32A, SLL
|
Infineon
|
| BSS209PW |
Low Voltage MOSFETs - OptiMOS MOSFET, -20V, SOT-323
OptiMOS -P Small-Signal-Transistor
|
INFINEON[Infineon Technologies AG]
|
| BSV236SP |
OptiMOS -P Small-Signal-Transistor 的OptiMOS磷小信号晶体
Low Voltage MOSFETs - OptiMOS MOSFET, -20V, SOT-363
|
Infineon Technologies AG
|
| BSD223P |
Low Voltage MOSFETs - OptiMOS MOSFET, -20V, SOT-363
OptiMOS -P Small-Signal-Transistor
CHOKE RF COATED 1.8UH 10%
|
Infineon Technologies A...
Infineon Technologies AG
Philips Semiconductors
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
